(PDF) PM561BA Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PM561BA
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PM561BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 51mΩ @VGS = -10V ID -4A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -4 -3 -16 Power Dissipation3 TA = 25 °C TA = 70 °C PD 1.4 0.9 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 Junction-to-Ambient2 t≦10s Steady-State RqJA RqJA 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper. 9The Power dissipation is based on RqJA t ≦10s value. MAXIMUM 90 130 UNITS °C / W REV 1.0 1 2015/8/5 1 page PM561BA P-Channel Enhancement Mode MOSFET REV 1.0 5 2015/8/5 5 Page

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PDF PM561BA Data sheet ( Hoja de datos )