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P6503FM6 fiches techniques PDF

UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence P6503FM6
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P6503FM6 fiche technique
P6503FM6
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
65mΩ @VGS = -4.5V
ID
-3.6A
SOT-23-6
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-3.6
-3
-19
Avalanche Current
IAS -19
Avalanche Energy
L=0.1mH
EAS
18
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1
0.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1pusle width Limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
130 °C / W
Ver 1.0
1 2012/6/25

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