(PDF) PZC502FYB Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PZC502FYB
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PZC502FYB P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 550mΩ @VGS = -4.5V ID -0.7A SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -0.7 -0.6 -3 Power Dissipation TA = 25 °C TA= 70 °C PD 0.4 0.3 ESD Class HBM 2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A W KV °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RqJA 280 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measureed with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air environment with TA =25°C.The value in any given application depends on the user's specific board design. °C / W Ver 1.0 1 2013-8-30 1 page PZC502FYB P-Channel Enhancement Mode MOSFET Ver 1.0 5 2013-8-30 5 Page

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PDF PZC502FYB Data sheet ( Hoja de datos )