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P1203EVG fiches techniques PDF

UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence P1203EVG
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P1203EVG fiche technique
P1203EVG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
12mΩ @VGS = -10V
ID
-12A
SOP- 08
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
Gate-Source Voltage
VDS
-30
V
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-12
-9
A
-50
Avalanche Current
IAS -43
Avalanche Energy
L = 0.1mH
EAS
94 mJ
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
W
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
Ver 1.0
1 2012/4/13

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