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Número de pieza | P1203EV | |
Descripción | P-Channel Enhancement Mode MOSFET | |
Fabricantes | UNIKC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de P1203EV (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! P1203EV
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
12mΩ @VGS = -10V
ID
-10A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-10
-8.3
-90
Avalanche Current
IAS -46
Avalanche Energy
L = 0.1mH
EAS
105
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
1Pulse width limited by maximum junction temperature.
2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C
UNITS
°C / W
REV 1.0
1 2014/9/16
1 page P1203EV
P-Channel Logic Level Enhancement Mode MOSFET
REV 1.0
5 2014/9/16
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet P1203EV.PDF ] |
Número de pieza | Descripción | Fabricantes |
P1203ED | P-Channel Enhancement Mode MOSFET | UNIKC |
P1203EEA | P-Channel Enhancement Mode MOSFET | UNIKC |
P1203EK | P-Channel Enhancement Mode MOSFET | UNIKC |
P1203EV | P-Channel Enhancement Mode MOSFET | UNIKC |
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