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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence PZP103BYB
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PZP103BYB fiche technique
PZP103BYB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3Ω @VGS = 4V
ID
0.3A
SOT-523
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
0.3
0.2
3
Avalanche Current
IAS 1.2
Avalanche Energy
L = 1mH EAS 0.8
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
0.5
0.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
220 °C / W
Ver 1.0
1 2012/5/18

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