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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P1103BVG
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P1103BVG fiche technique
P1103BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 11mΩ @VGS = 10V
ID
11A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
11
10
100
Avalanche Current
IAS 11
Avalanche Energy
L = 0.1mH
EAS
6
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
2.0
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
50 °C / W
Ver 1.0
1 2012/4/13

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