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UNIKC - Dual N-Channel Enhancement Mode MOSFET

Numéro de référence P2804HVG
Description Dual N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P2804HVG fiche technique
P2804HVG
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 28mΩ @VGS = 10V
ID
7A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
7
6
40
Power Dissipation
TA = 25 °C
TA= 70°C
PD
2
1.28
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg
TL
-55 to 150
275
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Lead
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJL
RqJA
TYPICAL
MAXIMUM
31
62.5
UNITS
°C / W
REV 1.0 1 2014/9/4

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