(PDF) P3304EV Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P3304EV
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P3304EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 33mΩ @VGS = -10V ID -7A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -7 -6 -30 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.3 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% SYMBOL RqJA TYPICAL MAXIMUM UNITS 50 °C / W Ver 1.0 1 2012/4/13 1 page P3304EV P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/13 5 Page

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PDF P3304EV Data sheet ( Hoja de datos )