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UNIKC - N&P-Channel Enhancement Mode MOSFET

Numéro de référence PA610NV
Description N&P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PA610NV fiche technique
PA610NV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
100V
RDS(ON)
160mΩ @VGS =10V
-100V
200mΩ @VGS = -10V
ID
2.5A
-2.2A
Channel
N
P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 100
VDS P -100
Gate-Source Voltage
N ±30
VGS P ±30
Continuous Drain Current
TA = 25 °C
TA = 70°C
N 2.5
P -2.2
ID N 2
P -1.7
Pulsed Drain Current1
N 20
IDM P -20
Avalanche Current
N 24
IAS P -28
Avalanche Energy
L = 0.1mH
N 28
EAS P 38
Power Dissipation
TA = 25 °C
TA = 70 °C
N
2
P
PD
N
1.28
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014/12/5

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