(PDF) PA504EV Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PA504EV
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
Logotipo
Hay una vista previa y un enlace de descarga de PA504EV (archivo pdf) en la parte inferior de esta página. Total 5 Páginas
No Preview Available ! PA504EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 150mΩ @VGS = -10V ID -2.7A SOP- 8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1,2 TA = 25 °C TA = 70 °C ID IDM -2.7 -2.1 -15 Avalanche Current IAS -10 Avalanche Energy L = 0.1mH EAS 5 Power Dissipation TA = 25 °C TA = 70 °C PD 1.8 1.2 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient RqJA 70 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. °C / W REV 1.0 1 2014/9/17 1 page PA504EV P-Channel Enhancement Mode MOSFET REV 1.0 5 2014/9/17 5 Page

Páginas	Total 5 Páginas
PDF Descargar	[ Datasheet PA504EV.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF PA504EV Data sheet ( Hoja de datos )