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UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence PV537BA
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PV537BA fiche technique
PV537BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
9mΩ @VGS = -10V
ID
-11A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-11
-8.7
-50
Avalanche Current
IAS -35
Avalanche Energy
L=0.1mH
EAS
61
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.8
1.2
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
Junction-to-Case
RqJA
RqJC
68
°C / W
25
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.in a still air
environment with TA=25°C.
REV 1.0 1 2015/1/7

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