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Número de pieza | PV551BA | |
Descripción | P-Channel Enhancement Mode MOSFET | |
Fabricantes | UNIKC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PV551BA (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PV551BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-9A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-9
-7
-40
Avalanche Current
IAS -23.5
Avalanche Energy
L=0.1mH
EAS
27
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
3
2
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t ≦10s
Steady-State
RqJA
RqJA
40
72
Junction-to-Case
Steady-State
RqJC
30
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.in a still air
environment with TA=25°C.
3The Power dissipation is based on RqJA t ≦10s value.
UNITS
°C / W
REV 1.1 1 2015/7/7
1 page PV551BA
P-Channel Enhancement Mode MOSFET
REV 1.1 5 2015/7/7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet PV551BA.PDF ] |
Número de pieza | Descripción | Fabricantes |
PV551BA | P-Channel Enhancement Mode MOSFET | UNIKC |
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