(PDF) PV563BA Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	PV563BA
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PV563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -9.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -9.5 -7.6 -40 Avalanche Current IAS -32 Avalanche Energy L=0.1mH EAS 53 Power Dissipation3 TA = 25 °C TA = 70 °C PD 3 2 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 40 75 Junction-to-Case Steady-State RqJC 24 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.in a still air environment with TA=25°C. 3The Power dissipation is based on RqJA t ≦10s value. UNITS °C / W REV 1.0 1 2016/12/20 1 page PV563BA P-Channel Enhancement Mode MOSFET REV 1.0 5 2016/12/20 5 Page

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PDF PV563BA Data sheet ( Hoja de datos )