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UNIKC - Dual N-Channel Enhancement Mode MOSFET

Numéro de référence P6803HVG
Description Dual N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P6803HVG fiche technique
P6803HVG
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 58mΩ @VGS = 10V
ID
4.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
4.5
3.6
20
Power Dissipation
TA = 25 °C
TA= 70°C
PD
2
1.3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
62.5 °C / W
REV 1.0
1 2014/10/17

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