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Numéro de référence | P8010BV | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P8010BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID
3.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
3.5
2.8
20
Avalanche Current
IAS 12
Avalanche Energy
L =0.1mH
EAS
7.2
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.4
1.5
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Case
RqJC
25
Junction-to-Ambient2
RqJA
52
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measureed with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
UNITS
°C / W
Ver 1.0
1 2013-8-30
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Pages | Pages 5 | ||
Télécharger | [ P8010BV ] |
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