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UNIKC - Dual N-Channel Enhancement Mode MOSFET

Numéro de référence PB210HV
Description Dual N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PB210HV fiche technique
PB210HV
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ @VGS = 10V
ID
2A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
2
1.6
18
Avalanche Current
IAS 18
Avalanche Energy
L =0.1mH
EAS
16
Power Dissipation
TA= 25 °C
TA =70 °C
PD
2
1.3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL MAXIMUM UNITS
65 °C / W
REV 1.0
1 2014/12/3

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