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UNIKC - Dual N-Channel Enhancement Mode MOSFET

Numéro de référence PB554DY
Description Dual N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PB554DY fiche technique
PB554DY
Dual Common Drain N-Channel MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 10mΩ @VGS = 4.5V
ID
12A
PDFN 2X5
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±10
Continuous Drain Current3
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
12
9.8
40
Avalanche Current
IAS 23
Avalanche Energy
L = 0.1mH
EAS
26
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
61
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 9.5A.
UNITS
°C / W
REV 1.7 1 2015/3/3

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