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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P1603BEX
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P1603BEX fiche technique
P1603BEX
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 16mΩ @VGS = 10V
ID3
24A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
24
Continuous Drain Current3
TC = 100 °C
TA = 25 °C
ID
15
8
Pulsed Drain Current1
TA= 70 °C
IDM
6.3
60
Avalanche Current
IAS 20.5
Avalanche Energy
L = 0.1mH
EAS
21
TC = 25 °C
15
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
6
1.7
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
Junction-to-Case
RqJC
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
3Package limitation current is 18A.
MAXIMUM
73
8
UNITS
°C / W
REV 1.0
1 2016/5/17

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