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PDF PB5A2BX Data sheet ( Hoja de datos )
| Número de pieza | PB5A2BX | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
| Logotipo |  |
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PB5A2BX
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 9mΩ @VGS = 4.5V
ID
11A
PDFN 2X2S
100% RG Test
100% UIL Test
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
11
9
33
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
MAXIMUM
60
UNITS
°C / W
REV 1.0
1 2016/11/1
1 page  
PB5A2BX
N-Channel Enhancement Mode MOSFET
REV 1.0
5 2016/11/1
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PB5A2BX.PDF ] | |
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