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Datasheet PB5G8JW-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
PB5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | PB50 | POWER BOOSTER AMPLIFIER POWER BOOSTER AMPLIFIER
PB50
M I C R O T E C H N O L O G Y
HTTP://WWW.APEXMICROTECH.COM
(800) 546-APEX
(800) 546-2739
FEATURES
• • • • • • • WIDE SUPPLY RANGE — ±30V to ±100V HIGH OUTPUT CURRENT — Up to 2A Continuous VOLTAGE AND CURRENT GAIN HIGH SLEW RATE — 50V/µs Minimu  ETC amplifier | | |
| 2 | PB5006 | Bridge Rectifiers www.vishay.com
PB5006, PB5008, PB5010
Vishay General Semiconductor
Enhanced isoCink+TM Bridge Rectifiers
isoCink+™
~~ +
Case Style PB
+ ~ ~ -
FEATURES
• UL recognition file number E312394 (QQQX2) UL 1557 (see *)
• Enhanced high-current density single in-line package
• Superior thermal  Vishay rectifier | | |
| 3 | PB5008 | Bridge Rectifiers www.vishay.com
PB5006, PB5008, PB5010
Vishay General Semiconductor
Enhanced isoCink+TM Bridge Rectifiers
isoCink+™
~~ +
Case Style PB
+ ~ ~ -
FEATURES
• UL recognition file number E312394 (QQQX2) UL 1557 (see *)
• Enhanced high-current density single in-line package
• Superior thermal Vishay rectifier | | |
| 4 | PB5010 | Bridge Rectifiers www.vishay.com
PB5006, PB5008, PB5010
Vishay General Semiconductor
Enhanced isoCink+TM Bridge Rectifiers
isoCink+™
~~ +
Case Style PB
+ ~ ~ -
FEATURES
• UL recognition file number E312394 (QQQX2) UL 1557 (see *)
• Enhanced high-current density single in-line package
• Superior thermal Vishay rectifier | | |
| 5 | PB521BX | P-Channel Enhancement Mode MOSFET PB521BX
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
21mΩ @VGS = -4.5V
ID -7.4A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Contin  UNIKC mosfet | | |
| 6 | PB544DU | N-Channel Enhancement Mode MOSFET PB544DU
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 13.5mΩ @VGS = 10V
ID 10A
PDFN 2X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous UNIKC mosfet | | |
| 7 | PB544JU | Dual N-Channel Enhancement Mode MOSFET PB544JU
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 8mΩ @VGS = 4.5V
ID 12.9A
TDFN 2X3-6
1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Ga UNIKC mosfet | |
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