(PDF) PB560DZ Datasheet - Dual N-Channel Enhancement Mode MOSFET

Número de pieza	PB560DZ
Descripción	Dual N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
Logotipo
Hay una vista previa y un enlace de descarga de PB560DZ (archivo pdf) en la parte inferior de esta página. Total 5 Páginas
No Preview Available ! PB560DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 26mΩ @VGS = 4.5V ID 7.8A PDFN 2X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA= 25 °C TA = 70 °C ID IDM 7.8 6.2 40 Avalanche Current IAS 10 Avalanche Energy3 EAS 4.9 Power Dissipation TA = 25 °C TA= 70 °C PD 2.4 1.5 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 52 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2014-2-12 1 page PB560DZ Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2014-2-12 5 Page

Páginas	Total 5 Páginas
PDF Descargar	[ Datasheet PB560DZ.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF PB560DZ Data sheet ( Hoja de datos )