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PDF AT28C16-T Data sheet ( Hoja de datos )
| Número de pieza | AT28C16-T | |
| Descripción | 16K (2K x 8) PCMCIA Nonvolatile Attribute Memory | |
| Fabricantes | ATMEL Corporation | |
| Logotipo |  |
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Features
• Ideal Rewritable Attribute Memory
• Simple Write Operation
– Self-Timed Byte Writes
– On-chip Address and Data Latch for SRAM-like Write Operation
– Fast Write Cycle Time - 1 ms
– 5-Volt-Only Nonvolatile Writes
• End of Write Detection
– RDY/BUSY Output
– DATA Polling
• High Reliability
– Endurance: 100,000 Write Cycles
– Data Retention: 10 Years Minimum
• Single 5-Volt Supply for Read and Write
• Very Low Power
– 30 mA Active Current
– 100 µA Standby Current
Description
The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only
byte writable nonvolatile memory (EEPROM). Standby current is typically less than
100 µA. The AT28C16-T is written like a Static RAM, eliminating complex program-
ming algorithms. The fast write cycle times of 1 ms, allow quick card reconfiguration
in-system. Data retention is specified as 10 years minimum, precluding the necessity
for batteries. Three access times have been specified to allow for varying layers of
buffering between the memory and the PCMCIA interface.
The AT28C16-T is accessed like a Static RAM for read and write operations. During a
byte write, the address and data are latched internally. Following the initiation of a
write cycle, the device will go to a busy state and automatically write the latched data
using an internal control timer. The device provides two methods for detecting the end
of a write cycle; the RDY/BUSY output and DATA POLLING of I/O7.
16K (2K x 8)
PCMCIA
Nonvolatile
Attribute
Memory
AT28C16-T
Pin Configurations
Pin Name
A0 - A10
CE
OE
WE
I/O0 - I/O7
RDY/BUSY
NC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
Ready/Busy Output
No Connect
OE
NC
A9
A8
NC
WE
VCC
RDY/BUSY
NC
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
TSOP
Top View
28 A10
27 CE
26 I/O7
25 I/O6
24 I/O5
23 I/O4
22 I/O3
21 GND
20 I/O2
19 I/O1
18 I/O0
17 A0
16 A1
15 A2
Rev. 0258C–10/98
1
1 page  
AC Read Characteristics
PCMCIA
Symbol
tC (R)
tA (A)
tA (CE)
tA (OE)
tEN (CE)
tEN (OE)
tV (A)
tDIS (CE)
tDIS (OE)
Atmel
Symbol
tRC
tACC
tCE(1)
tOE(2)
tLz(4)
tOLZ(4)
tOH
tDF(3)(4)
tDF(3)(4)
Parameter
Read Cycle Time
Address Access Time
CE Access Time
OE Access Time
Output Enable Time From CE
Output Enable Time From OE
Output Hold Time
Output Disable Time From CE
Output Disable Time From OE
AC Read Waveforms(1)(2)(3)(4)
AT28C16-T
AT28C16-15T
Min Max
150
150
150
0 75
0
0
0
0 50
0 50
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
Output Test Load
tR, tF < 5 ns
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Symbol
Typ
Max
CIN
COUT
Note:
46
8 12
1. This parameter is characterized and is not 100% tested.
Units
pF
pF
Conditions
VIN = 0V
VOUT = 0V
5
5 Page 
AT28C16-T
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AT28C16-T.PDF ] | |
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