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Numéro de référence | PE526BA | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
PE526BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 4mΩ @VGS = 10V
ID3
49A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
49
Continuous Drain Current3
Tc = 100 °C
TA = 25 °C
ID
31
17
Pulsed Drain Current1
TA= 70 °C
IDM
14
50
Avalanche Current
IAS 47
Avalanche Energy
L =0.1mH
EAS
110
TC = 25 °C
16
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
6
2
TA = 70 °C
1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
60
Junction-to-Case
RqJC
7.5
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 25A.
UNITS
°C / W
REV 1.0
1 2014-2-28
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Pages | Pages 5 | ||
Télécharger | [ PE526BA ] |
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