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Numéro de référence | PE532DX | ||
Description | Dual N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
PE532DX
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 19mΩ @VGS = 10V
ID3
21A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC= 25 °C
21
Continuous Drain Current3
TC = 100 °C
TA = 25 °C
ID
13
7.5
Pulsed Drain Current1
TA= 70 °C
IDM
6
25
Avalanche Current
IAS 17
Avalanche Energy
L = 0.1mH
EAS
15
TC= 25 °C
14
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
5
1.7
TA= 70°C
1.1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
8.5
Junction-to-Ambient2
RqJA
70
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 9A.
UNITS
°C / W
REV 1.0
1 2016/12/19
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Pages | Pages 8 | ||
Télécharger | [ PE532DX ] |
No | Description détaillée | Fabricant |
PE532DX | Dual N-Channel Enhancement Mode MOSFET | UNIKC |
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