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UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence PE529BA
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PE529BA fiche technique
PE529BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
9.5mΩ @VGS = -4.5V
ID
-34A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±8
Tc = 25 °C
-34
Continuous Drain Current3
Tc = 100 °C
TA = 25 °C
ID
-21
-12
Pulsed Drain Current1
TA= 70 °C
IDM
-9.8
-100
Avalanche Current
IAS -39
Avalanche Energy
L =0.1mH
EAS
76
TC = 25 °C
17.8
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
7
2.3
TA = 70 °C
1.5
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
54
Junction-to-Case
RqJC
7
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 22A.
UNITS
°C / W
REV 1.0
1 2014/7/16

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