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UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence PE5A1BA
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PE5A1BA fiche technique
PE5A1BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
6.5mΩ @VGS = -4.5V
ID
-43A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -20
VGS ±8
TC = 25 °C
-43
Continuous Drain Current4
Pulsed Drain Current1
Avalanche Current
TC = 100 °C
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
-27
-18
-14
-50
-39
Avalanche Energy
L = 0.1mH
EAS
76
TC = 25 °C
20
Power Dissipation3
Junction & Storage Temperature Range
TC = 100 °C
TA = 25 °C
TA = 70 °C
PD
TJ, TSTG
8
3.5
2.2
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.1
1 2015/10/14

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