(PDF) PE5E4BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PE5E4BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PE5E4BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.5mΩ @VGS = 10V ID 31A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±25 Continuous Drain Current3 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 31 19 90 Continuous Drain Current TA = 25 °C TA = 70 °C ID 10 8 Avalanche Current IAS 22 Avalanche Energy L =0.1mH EAS 24 TC = 25 °C 18 Power Dissipation TC = 100 °C TA = 25 °C PD 7 1.7 TA = 70 °C 1.1 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Steady-State RqJA 70 Junction-to-Case Steady-State RqJC 7 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 27A. UNITS °C / W REV 1.0 1 2016/12/16 1 page PE5E4BA N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/12/16 5 Page

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PDF PE5E4BA Data sheet ( Hoja de datos )