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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence PE610SA
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PE610SA fiche technique
PE610SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 3mΩ @VGS = 10V
ID
62A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
62
Continuous Drain Current3
TC = 100 °C
TA = 25 °C
ID
39
24
Pulsed Drain Current1
TA= 70 °C
IDM
19
100
Avalanche Current
IAS 34
Avalanche Energy
L =0.1mH
EAS
57.8
TC = 25 °C
20
Power Dissipation4
TC = 100 °C
TA = 25 °C
PD
8
3
TA = 70 °C
2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
t10s
Steady-State
RqJA
RqJA
40
60
Junction-to-Case
Steady-State
RqJC
6
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 21A
4The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.1
1 2015/9/15

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