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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence PE616BA
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PE616BA fiche technique
PE616BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7mΩ @VGS = 10V
ID
36A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
36
23
100
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
12
9.2
Avalanche Current
IAS 23
Avalanche Energy
L =0.1mH
EAS
26.4
TC = 25 °C
16.7
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
6.7
1.7
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
75
Junction-to-Case
RqJC
7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.1
1 2016/11/23

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