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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence PE6D0BA
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PE6D0BA fiche technique
PE6D0BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 10.5mΩ @VGS = 10V
ID
32A
PDFN 3X3P
100% UIS Tested
100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current4
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
32
20
80
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
13
10
Avalanche Current
IAS 21
Avalanche Energy
L =0.1mH
EAS
22
Power Dissipation
Power Dissipation3
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 70 °C
PD
20.8
8.3
3.1
2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2016/12/23

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