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Numéro de référence | PK5E6BA | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
PK5E6BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID
52A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±25 V
Continuous Drain Current4
Pulsed Drain Current1
Continuous Drain Current
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
ID
52
33
120
A
19
15
Avalanche Current
IAS 33
Avalanche Energy
L =0.1mH
EAS
54 mJ
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
W
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
4
W
2.7
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t ≦10s
Steady-State
RqJA
RqJA
30
51
Junction-to-Case
Steady-State
RqJC
4
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t ≦10s value.
4Package limitation current is 35A.
UNITS
°C / W
REV 1.0
1 2017/1/10
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Pages | Pages 8 | ||
Télécharger | [ PK5E6BA ] |
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