(PDF) PK608BA Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PK608BA
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PK608BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 3.5mΩ @VGS = 10V ID 87A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 87 55 150 Continuous Drain Current TA = 25 °C TA= 70 °C ID 20 15.6 Avalanche Current IAS 49 Avalanche Energy L =0.1mH EAS 120 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Power Dissipation TA = 25 °C TA = 70 °C PD 2.4 1.5 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RqJA 50.2 Junction-to-Case RqJC 2.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 51A. 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.1 1 2016/7/14 1 page PK608BA N-Channel Enhancement Mode MOSFET REV 1.1 5 2016/7/14 5 Page

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PDF PK608BA Data sheet ( Hoja de datos )