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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence PK608DY
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PK608DY fiche technique
PK608DY
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
30V
RDS(ON)
7mΩ @VGS =10V
30V 5.5mΩ @VGS =10V
ID Channel
50A Q1
58A Q2
PDFN 5X6P
1 : G1
2,3,4 : D1
5,6,7 : S2
8 : G2
9 : S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH.
Drain-Source Voltage
Q1
VDS
Q2
Gate-Source Voltage
Q1
VGS
Q2
Continuous Drain Current3
TC = 25 °C
TC = 100°C
Q1
Q2
ID
Q1
Q2
Pulsed Drain Current1
Q1
IDM Q2
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Q1
Q2
ID Q1
Q2
Avalanche Current
Q1
IAS
Q2
Avalanche Energy
L = 0.1mH
Q1
EAS
Q2
Power Dissipation
Q1
TC = 25 °C
Q2
PD Q1
TC = 100 °C
Q2
LIMITS
30
30
±20
±20
50
58
31
36
81
104
12
15
10
12
22
30
24
45
28
35
11
14
UNITS
V
A
mJ
W
REV 1.0
1 2014/9/27

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