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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence PK618BA
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PK618BA fiche technique
PK618BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.5mΩ @VGS = 10V
ID
59A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
59
37
150
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
15
12
Avalanche Current
IAS 31
Avalanche Energy
L =0.1mH
EAS
48
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
34
13
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
50
Junction-to-Case
RqJC
3.6
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 26A.
UNITS
°C / W
REV 1.0
1 2014/7/10

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