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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence PKC16BB
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PKC16BB fiche technique
PKC16BB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7mΩ @VGS = 10V
ID
51A
100% UIS Tested
100% Rg Tested
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
VDS 30 V
Gate-Source Voltage
VGS ±20 V
Continuous Drain Current
Pulsed Drain Current1
Continuous Drain Current
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
ID
IDM
ID
51
32
120
A
18
14
Avalanche Current
IAS 24.7
Avalanche Energy
L =0.1mH
EAS
30.5 mJ
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
32
W
13
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
4.1
W
2.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
30
54
Junction-to-Case
Steady-State
RqJC
3.8
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.0
1 2017/1/13

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