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UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence PZ1003EK
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PZ1003EK fiche technique
PZ1003EK
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
10mΩ @VGS = -10V
ID
-50A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current2,4
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
-50
ID
-40
IDM -100
Continuous Drain Current
TA = 25 °C
TA = 70 °C
-12
ID -9
Avalanche Current
IAS -45
Avalanche Energy
L = 0.1mH
EAS 102
TC = 25 °C
41
Power Dissipation
TC = 100 °C
TA = 25 °C
26
PD
2.5
TA = 70 °C
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014/7/14

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