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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence PA210BL
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PA210BL fiche technique
PA210BL
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID
3A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1,2
TA = 25 °C
TA = 70 °C
ID
IDM
3
1.9
25
Avalanche Current
IAS 25
Avalanche Energy
L = 0.1mH
EAS
33
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
0.8
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
60 °C / W
Ver 1.0
1 2012/4/12

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