(PDF) P4404EI Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	P4404EI
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P4404EI P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 44mΩ @VGS = -10V ID -24A TO-251 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C ID IDM -24 -19 -80 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS -27 38 Power Dissipation TC = 25 °C TC = 70 °C PD 42 30 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = -20V . Starting TJ = 25°C. SYMBOL RqJC RqJA TYPICAL MAXIMUM 3 75 UNITS °C / W REV 1.0 1 2014/8/15 1 page P4404EI P-Channel Logic Level Enhancement Mode MOSFET REV 1.0 5 2014/8/15 5 Page

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PDF P4404EI Data sheet ( Hoja de datos )