(PDF) PI506BZ Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	PI506BZ
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! PI506BZ N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 68A TO-251(IS) 1.GATE 2.DRAIN 3.SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 68 43 150 Avalanche Current IAS 30.4 Avalanche Energy L = 0.1mH EAS 46 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 40A. SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.5 62.5 UNITS °C / W REV 1.0 1 2015/3/20 1 page PI506BZ N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/3/20 5 Page

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PDF PI506BZ Data sheet ( Hoja de datos )