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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P0603BDB
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P0603BDB fiche technique
P0603BDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5.8mΩ @VGS = 10V
ID
72A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
72
46
160
Avalanche Current
IAS 50
Avalanche Energy
L=0.1mH
EAS
126
Power Dissipation
TC= 25 °C
TC= 100°C
PD
55
22
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Package limitation current is 55A.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.3 °C / W
REV 1.0
1 2014/4/30

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