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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P0803BDG
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P0803BDG fiche technique
P0803BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.2mΩ @VGS = 10V
ID
60A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
60
38
120
Avalanche Current
IAS 35
Avalanche Energy
L=0.1mH
EAS
60
Power Dissipation
TC= 25 °C
TC= 100°C
PD
50
20
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
62.5
UNITS
°C / W
REV 1.0 1 2014/5/6

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