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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P1525EDB
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P1525EDB fiche technique
P1525EDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
260mΩ @VGS = 10V
ID
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
15
9.4
60
7.6
Avalanche Energy
L= 1mH
EAS 29
Power Dissipation
TC= 25 °C
TC= 100°C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
73
29
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.7
62.5
UNITS
°C / W
REV 1.1
1 2016/6/28

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