DataSheetWiki


P1203ED fiches techniques PDF

UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence P1203ED
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





1 Page

No Preview Available !





P1203ED fiche technique
P1203ED
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
12mΩ @VGS = -10V
ID
-52A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-52
-33
-150
Avalanche Current
Avalanche Energy2
L = 0.1mH
IAS
EAS
-44
97
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
49
19
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2VDD=-15V.Starting TJ=25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.55
50
UNITS
°C / W
Ver 1.1
1 2013-3-19

PagesPages 5
Télécharger [ P1203ED ]


Fiche technique recommandé

No Description détaillée Fabricant
P1203ED P-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P1203EEA P-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P1203EK P-Channel Enhancement Mode MOSFET UNIKC
UNIKC
P1203EV P-Channel Enhancement Mode MOSFET UNIKC
UNIKC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche