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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P1825HDB
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P1825HDB fiche technique
P1825HDB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
230mΩ @VGS = 10V
ID
18A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 250
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
18
11
51
Avalanche Current
IAS 9
Avalanche Energy
L = 1mH
EAS
40
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
74
29
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
1.7
°C / W
62.5
REV 1.0 1 2016/8/9

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