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Numéro de référence | P9515BDE | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
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P9515BDE
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
108mΩ @VGS = 10V
ID
17A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
17
10
40
Avalanche Current
IAS 18
Avalanche Energy
L = 1mH EAS 168
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
63
25
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
2
°C / W
62.5
REV 1.2
1 2016/2/29
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Pages | Pages 8 | ||
Télécharger | [ P9515BDE ] |
No | Description détaillée | Fabricant |
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