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UNIKC - P-Channel Enhancement Mode MOSFET

Numéro de référence PD563BA
Description P-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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PD563BA fiche technique
PD563BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
15mΩ @VGS = -10V
ID
-46A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±25
Continuous Drain Current3
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
-46
-29
-130
Avalanche Current
IAS -34
Avalanche Energy
L = 0.1mH
EAS
57.8
Power Dissipation
TC= 25 °C
TC= 100°C
PD
62.5
25
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is -39A.
SYMBOL
RqJC
RqJA
TYPICA
L
MAXIMUM
2
62.5
UNITS
°C / W
REV 1.0
1 2017/1/13

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