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Numéro de référence | P2804ND5G | ||
Description | P&N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P2804ND5G
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
40V
RDS(ON)
28mΩ @VGS =10V
-40V
48mΩ @VGS = -10V
ID
21A
-16A
Channel
N
P
TO-252-5
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 40
VDS P -40
Gate-Source Voltage
N ±20
VGS P ±20
Continuous Drain Current
N 21
TC = 25 °C
P -16
ID N 13
TC = 100°C
P -10
Pulsed Drain Current1
N 50
IDM P -50
Avalanche Current
N 26
IAS P -26
Avalanche Energy
L = 0.1mH
N 33
EAS P 33
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
N
21
P
N
8
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2014-5-8
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Pages | Pages 8 | ||
Télécharger | [ P2804ND5G ] |
No | Description détaillée | Fabricant |
P2804ND5G | P&N-Channel Enhancement Mode MOSFET | UNIKC |
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