P9006ESG Datasheet PDF - UNIKC
| Part Number | P9006ESG | |
| Description | P-Channel Enhancement Mode MOSFET | |
| Manufacturers | UNIKC | |
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There is a preview and P9006ESG download ( pdf file ) link at the bottom of this page. Total 5 Pages | ||
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P9006ESG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
90mΩ @VGS = 10V
ID
-18A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-18
-12
-48
Avalanche Current
IAS -22
Avalanche Energy
L = 0.1mH
EAS
24
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
54
22
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.3 °C / W
Ver 1.0
1 2012/11/22
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P9006ESG
P-Channel Enhancement Mode MOSFET
Ver 1.0
5 2012/11/22
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for P9006ESG electronic component. |
| Information | Total 5 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ P9006ESG.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| P9006ESG | The function is P-Channel Enhancement Mode MOSFET. UNIKC | |
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