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Numéro de référence | P0610BT | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
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1 Page
P0610BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
6.5mΩ @VGS = 10V
ID2
120A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
120
76
375
Avalanche Current
IAS 39
Avalanche Energy
L = 1mH
EAS 770
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
208
83
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is 110A.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
0.6
°C / W
62.5
REV 1.0
1 2017/1/13
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Pages | Pages 8 | ||
Télécharger | [ P0610BT ] |
No | Description détaillée | Fabricant |
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